DMN2036UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFETN-CHAN 24V X2-WLB1616-4
$0.24
Available to order
Reference Price (USD)
3,000+
$0.22898
6,000+
$0.21421
15,000+
$0.19944
30,000+
$0.18909
Exquisite packaging
Discount
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Choose the DMN2036UCB4-7 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMN2036UCB4-7 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.45W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLBGA
- Supplier Device Package: X2-WLB1616-4
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