DMN2080UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 3A X2-WLB0606-4
$0.14
Available to order
Reference Price (USD)
3,000+
$0.15113
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2080UCB4-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN2080UCB4-7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 710mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-WLB0606-4
- Package / Case: 4-XFBGA, WLBGA
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