DMN2710UDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT363 T&R
$0.06
Available to order
Reference Price (USD)
1+
$0.06213
500+
$0.0615087
1000+
$0.0608874
1500+
$0.0602661
2000+
$0.0596448
2500+
$0.0590235
Exquisite packaging
Discount
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Choose the DMN2710UDWQ-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMN2710UDWQ-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
- Power - Max: 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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