DMN2710UTQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
$0.07
Available to order
Reference Price (USD)
1+
$0.06741
500+
$0.0667359
1000+
$0.0660618
1500+
$0.0653877
2000+
$0.0647136
2500+
$0.0640395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2710UTQ-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
STMicroelectronics
STB47N50DM6AG
onsemi
VN2222LLRL
onsemi
NTMFS4121NT1G
Micro Commercial Co
SI3420A-TP
Wolfspeed, Inc.
C3M0025065J1
Panjit International Inc.
PJQ4460AP-AU_R2_000A1
Vishay Siliconix
SUG80050E-GE3
IXYS
IXTR102N65X2
Infineon Technologies
IRFR5505TRLPBF
Rectron USA