DMN3055LFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 5A UDFN2020-6
$0.14
Available to order
Reference Price (USD)
10,000+
$0.15042
Exquisite packaging
Discount
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The DMN3055LFDB-13 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMN3055LFDB-13 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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