DMN3060LCA3-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 3.9A X4DSN1006-3
$0.11
Available to order
Reference Price (USD)
1+
$0.10575
500+
$0.1046925
1000+
$0.103635
1500+
$0.1025775
2000+
$0.10152
2500+
$0.1004625
Exquisite packaging
Discount
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The DMN3060LCA3-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 790mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X4-DSN1006-3
- Package / Case: 3-XFDFN
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