DMN3065LW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 4A SOT323
$0.49
Available to order
Reference Price (USD)
10,000+
$0.10001
30,000+
$0.09424
50,000+
$0.08558
100,000+
$0.08442
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3065LW-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMN3065LW-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
STMicroelectronics
STP55NF06L
STMicroelectronics
STS4DNFS30
Vishay Siliconix
SI2315BDS-T1-E3
IXYS
IXFT88N30P
Rohm Semiconductor
R8008ANJFRGTL
onsemi
NTMFS5H615NLT1G
IXYS
IXTY18P10T
Vishay Siliconix
SIHF22N65E-GE3
onsemi
NDD02N60Z-1G
onsemi