DMN3066L-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
$0.09
Available to order
Reference Price (USD)
1+
$0.08696
500+
$0.0860904
1000+
$0.0852208
1500+
$0.0843512
2000+
$0.0834816
2500+
$0.082612
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMN3066L-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMN3066L-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 810mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STP9NK90Z
Fairchild Semiconductor
NDP603AL
Infineon Technologies
IPP096N03LGHKSA1
onsemi
NTTFS4965NFTAG
Infineon Technologies
IRFZ48NPBF
Nexperia USA Inc.
BUK9880-55A/CUX
Microchip Technology
VN2110K1-G
Sanken
SKI04044
Nexperia USA Inc.
PSMN7R5-30MLDX
Vishay Siliconix