DMN3190LDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 1A SOT363
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09600
6,000+
$0.08720
15,000+
$0.07840
30,000+
$0.07400
75,000+
$0.06652
150,000+
$0.06432
Exquisite packaging
Discount
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The DMN3190LDW-7 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMN3190LDW-7 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
- Power - Max: 320mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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