DMN32D2LFB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 300MA 3DFN
$0.46
Available to order
Reference Price (USD)
3,000+
$0.17145
6,000+
$0.16155
15,000+
$0.15165
30,000+
$0.14472
75,000+
$0.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMN32D2LFB4-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMN32D2LFB4-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
Related Products
Toshiba Semiconductor and Storage
TPH1R712MD,L1Q
Rohm Semiconductor
SCT3080KLGC11
Toshiba Semiconductor and Storage
TK20V60W,LVQ
onsemi
FDP12N60NZ
Nexperia USA Inc.
PHB45NQ10T,118
onsemi
SCH1439-TL-W
IXYS
IXTP20N65XM
Central Semiconductor Corp
CMPDM7002AHC TR PBFREE
Nexperia USA Inc.
BUK7909-75ATE127
Infineon Technologies