DMN3401LDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT363 T&R
$0.07
Available to order
Reference Price (USD)
1+
$0.06741
500+
$0.0667359
1000+
$0.0660618
1500+
$0.0653877
2000+
$0.0647136
2500+
$0.0640395
Exquisite packaging
Discount
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Elevate your electronics with the DMN3401LDWQ-13 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMN3401LDWQ-13 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 290mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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