DMN53D0LW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 50V 360MA SOT323
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMN53D0LW-13 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMN53D0LW-13 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Infineon Technologies
BSO220N03MSGXUMA1
Nexperia USA Inc.
PH6930DL115
Wolfspeed, Inc.
C3M0032120D
Toshiba Semiconductor and Storage
TK9A60D(STA4,Q,M)
Micro Commercial Co
SI01P10-TP
STMicroelectronics
STF26N65DM2
onsemi
NVTFS4C08NTWG
Nexperia USA Inc.
PSMN8R5-100PSQ
Infineon Technologies
IMZA65R072M1HXKSA1
STMicroelectronics