DMN601DWKQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CHAN 41V 60V SOT363
$0.42
Available to order
Reference Price (USD)
3,000+
$0.08160
6,000+
$0.07412
15,000+
$0.06664
30,000+
$0.06290
75,000+
$0.05654
150,000+
$0.05467
Exquisite packaging
Discount
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Elevate your electronics with the DMN601DWKQ-7 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMN601DWKQ-7 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 200mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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