DMN6069SE-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 4.3A/10A SOT223
$0.57
Available to order
Reference Price (USD)
2,500+
$0.21317
5,000+
$0.20086
12,500+
$0.18855
25,000+
$0.17994
62,500+
$0.17904
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN6069SE-13 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMN6069SE-13 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
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