DMN61D8LVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.63A TSOT26
$0.17
Available to order
Reference Price (USD)
1+
$0.16800
500+
$0.16632
1000+
$0.16464
1500+
$0.16296
2000+
$0.16128
2500+
$0.1596
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the DMN61D8LVT-13 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMN61D8LVT-13 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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