DMN61D8LVTQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.63A TSOT26
$0.17
Available to order
Reference Price (USD)
1+
$0.16860
500+
$0.166914
1000+
$0.165228
1500+
$0.163542
2000+
$0.161856
2500+
$0.16017
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN61D8LVTQ-13 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMN61D8LVTQ-13 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
Related Products
Texas Instruments
CSD87588NT
onsemi
SCH1406-TL-E-ON
Nexperia USA Inc.
PMGD175XNEX
Diodes Incorporated
DMP22D5UDJ-7A
Advanced Linear Devices Inc.
ALD110914PAL
Rohm Semiconductor
US6M2TR
Taiwan Semiconductor Corporation
TSM4925DCS RLG
Infineon Technologies
IPG20N06S4L11ATMA1
onsemi
EMH2417R-TL-H
Alpha & Omega Semiconductor Inc.