DMN63D8LDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 0.22A SOT363
$0.04
Available to order
Reference Price (USD)
1+
$0.04413
500+
$0.0436887
1000+
$0.0432474
1500+
$0.0428061
2000+
$0.0423648
2500+
$0.0419235
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN63D8LDW-13 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMN63D8LDW-13 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Diodes Incorporated
DMC10H220LSD-13
Diodes Incorporated
DMN3015LSD-13
Advanced Linear Devices Inc.
ALD110904SAL
Alpha & Omega Semiconductor Inc.
AOSD21311C
Microchip Technology
MSCSM70VM19C3AG
Taiwan Semiconductor Corporation
TSM300NB06DCR RLG
Microchip Technology
APTM120H29FG
Advanced Linear Devices Inc.
ALD210804PCL
onsemi
ECH8602M-TL-H
Vishay Siliconix