DMN63D8LDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 0.22A SOT363
$0.35
Available to order
Reference Price (USD)
3,000+
$0.06115
6,000+
$0.05376
15,000+
$0.04637
30,000+
$0.04390
75,000+
$0.04144
150,000+
$0.03651
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the DMN63D8LDW-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMN63D8LDW-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
onsemi
EFC6612R-TF
NXP USA Inc.
MRF8S9170NR3,528
Diodes Incorporated
BSS8402DWQ-13
Diodes Incorporated
DMN2029USD-13
Diodes Incorporated
DMP4050SSDQ-13
Diodes Incorporated
DMP2110UFDB-13
Rohm Semiconductor
QS6K21FRATR
Fairchild Semiconductor
FDW2508P
Diodes Incorporated
DMP2200UDW-7
Diodes Incorporated