DMNH15H110SK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 101V~250V TO252 T&
$0.46
Available to order
Reference Price (USD)
1+
$0.46431
500+
$0.4596669
1000+
$0.4550238
1500+
$0.4503807
2000+
$0.4457376
2500+
$0.4410945
Exquisite packaging
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The DMNH15H110SK3-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 97mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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