DMNH6021SPDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V POWERDI506
$0.78
Available to order
Reference Price (USD)
1+
$0.78285
500+
$0.7750215
1000+
$0.767193
1500+
$0.7593645
2000+
$0.751536
2500+
$0.7437075
Exquisite packaging
Discount
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Discover the high-performance DMNH6021SPDWQ-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMNH6021SPDWQ-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
- Power - Max: 1.5W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
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