DMP1045UFY4-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 5.5A DFN2015H4-3
$0.52
Available to order
Reference Price (USD)
3,000+
$0.15516
6,000+
$0.14669
15,000+
$0.13822
30,000+
$0.12805
75,000+
$0.12382
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the DMP1045UFY4-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMP1045UFY4-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2015H4-3
- Package / Case: 3-XFDFN
Related Products
NXP USA Inc.
BUK7E11-55B,127
Infineon Technologies
AUIRF8739L2TR
Analog Devices Inc./Maxim Integrated
MAX8737ETE+
Diotec Semiconductor
DI070P04PQ
Diodes Incorporated
DMN2026UVT-7
Renesas Electronics America Inc
2SK2425-E
Panjit International Inc.
PJL9436A1_R2_00001
STMicroelectronics
STD18NF03L
onsemi
FDN337N
Renesas Electronics America Inc