DMP2045UFY4-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 4.7A X2-DFN2015
$0.39
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMP2045UFY4-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 670mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2015-3
- Package / Case: 3-XDFN
Related Products
Nexperia USA Inc.
NXV100XPR
onsemi
NTTFS005N04CTAG
Rohm Semiconductor
RJU002N06T106
Vishay Siliconix
IRFIZ48GPBF
Alpha & Omega Semiconductor Inc.
AOWF11N70
Infineon Technologies
BSP89H6327XTSA1
Fairchild Semiconductor
FQD2N90TF
Rohm Semiconductor
RXL035N03TCR
Infineon Technologies
SPW11N80C3FKSA1
Nexperia USA Inc.