DMP2109UVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 3.7A TSOT26
$0.10
Available to order
Reference Price (USD)
1+
$0.09618
500+
$0.0952182
1000+
$0.0942564
1500+
$0.0932946
2000+
$0.0923328
2500+
$0.091371
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMP2109UVT-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMP2109UVT-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Nexperia USA Inc.
PMV48XP,215
IXYS
IXTA2R4N120P
Vishay Siliconix
SQJ479EP-T1_BE3
Vishay Siliconix
SQJA20EP-T1_GE3
Microchip Technology
APT8011JFLL
Renesas Electronics America Inc
HAT1038RJ-EL
IXYS
IXTL2N450
STMicroelectronics
STF7N80K5
Diodes Incorporated
DMN3028LQ-7
Vishay Siliconix