DMP6110SVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 60V 7.3A TSOT26
$0.66
Available to order
Reference Price (USD)
3,000+
$0.24765
6,000+
$0.23335
15,000+
$0.21905
30,000+
$0.20904
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMP6110SVT-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMP6110SVT-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-23-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Micro Commercial Co
SI2302-TP
Infineon Technologies
IRFR120NPBF
Diodes Incorporated
DMG3406L-13
Taiwan Semiconductor Corporation
TSM4NC50CP ROG
onsemi
NTMFS4C250NT1G
Rectron USA
RM3010
Toshiba Semiconductor and Storage
TPH4R803PL,LQ
Infineon Technologies
IPP65R190E6XKSA1
Nexperia USA Inc.
BUK7Y53-100B,115
Harris Corporation