DMT2004UFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 24V 14.1A 6UDFN
$0.22
Available to order
Reference Price (USD)
10,000+
$0.23590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMT2004UFDF-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMT2004UFDF-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
AUIRFR5410TRL
Rohm Semiconductor
RSJ400N10FRATL
onsemi
FDP8447L
IXYS
IXTH12N150
Infineon Technologies
IPA65R380E6XKSA1
IXYS
IXTH62N65X2
Microchip Technology
APT50M75JLLU2
IXYS
IXTP3N120
Vishay Siliconix
SISS72DN-T1-GE3
GeneSiC Semiconductor