DMT3009UDT-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V V-DFN3030-
$0.36
Available to order
Reference Price (USD)
1+
$0.36344
500+
$0.3598056
1000+
$0.3561712
1500+
$0.3525368
2000+
$0.3489024
2500+
$0.345268
Exquisite packaging
Discount
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Elevate your electronics with the DMT3009UDT-7 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMT3009UDT-7 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
- Power - Max: 1.1W (Ta), 16W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: V-DFN3030-8 (Type KS)
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