DMT47M2LDVQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V-40V POWERDI333
$0.51
Available to order
Reference Price (USD)
1+
$0.50943
500+
$0.5043357
1000+
$0.4992414
1500+
$0.4941471
2000+
$0.4890528
2500+
$0.4839585
Exquisite packaging
Discount
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Choose the DMT47M2LDVQ-7 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMT47M2LDVQ-7 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
- Power - Max: 2.34W (Ta), 14.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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