DMTH10H015SK3Q-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
$0.52
Available to order
Reference Price (USD)
1+
$0.52067
500+
$0.5154633
1000+
$0.5102566
1500+
$0.5050499
2000+
$0.4998432
2500+
$0.4946365
Exquisite packaging
Discount
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Enhance your electronic projects with the DMTH10H015SK3Q-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMTH10H015SK3Q-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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