DNBT8105-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 1A SOT23-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.06538
6,000+
$0.05750
15,000+
$0.04963
30,000+
$0.04700
75,000+
$0.04438
150,000+
$0.04000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DNBT8105-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the DNBT8105-7 provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 600 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
onsemi
MMBT2907AWT1G
Taiwan Semiconductor Corporation
MMBT3904 RFG
onsemi
MMBTA13LT3G
Comchip Technology
2N3906-G
onsemi
2SA1435-AA
NTE Electronics, Inc
2N5882
Diodes Incorporated
FMMT625TA
Renesas Electronics America Inc
2SA1395-AZ
Microchip Technology
JANTX2N6675
onsemi