DP0150BDJ-7
Diodes Incorporated
Diodes Incorporated
TRANS 2PNP 50V 0.1A SOT963
$0.00
Available to order
Reference Price (USD)
10,000+
$0.11369
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DP0150BDJ-7 BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The DP0150BDJ-7 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
Related Products
Diodes Incorporated
MMDT4124-7
Panasonic Electronic Components
DMC904010R
onsemi
MC1413BDR2
Diodes Incorporated
ZXT12P12DXTC
Rohm Semiconductor
UMZ8NTR
STMicroelectronics
L604C
onsemi
BC847BPDXV6T1
Central Semiconductor Corp
MPQ2907 PBFREE
Diodes Incorporated
DMMT5551-7
Analog Devices Inc.