DSS3515MQ-7
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR X1-DFN1006
$0.06
Available to order
Reference Price (USD)
1+
$0.06095
500+
$0.0603405
1000+
$0.059731
1500+
$0.0591215
2000+
$0.058512
2500+
$0.0579025
Exquisite packaging
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Discover the DSS3515MQ-7 Bipolar Junction Transistor (BJT) from Diodes Incorporated, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the DSS3515MQ-7 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Diodes Incorporated for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
- Power - Max: 400 mW
- Frequency - Transition: 340MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UFDFN
- Supplier Device Package: X1-DFN1006-3
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