DSS4160TQ-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 1A SOT23-3
$0.46
Available to order
Reference Price (USD)
3,000+
$0.11077
6,000+
$0.10521
15,000+
$0.09686
30,000+
$0.09129
75,000+
$0.08480
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DSS4160TQ-7 Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the DSS4160TQ-7 is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 725 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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