DSS60601MZ4-13
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 6A SOT223-3
$0.46
Available to order
Reference Price (USD)
2,500+
$0.18275
5,000+
$0.17225
12,500+
$0.16175
25,000+
$0.16000
Exquisite packaging
Discount
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The DSS60601MZ4-13 from Diodes Incorporated is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the DSS60601MZ4-13 is a reliable choice for both commercial and industrial use. Trust Diodes Incorporated to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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