DSS60601MZ4Q-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 120V 0.7A MPT3
$0.19
Available to order
Reference Price (USD)
1+
$0.19124
500+
$0.1893276
1000+
$0.1874152
1500+
$0.1855028
2000+
$0.1835904
2500+
$0.181678
Exquisite packaging
Discount
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Optimize your electronic systems with the DSS60601MZ4Q-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the DSS60601MZ4Q-13 delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Diodes Incorporated