DTA123YETL
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS PNP 150MW EMT3
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08280
6,000+
$0.07820
15,000+
$0.07130
30,000+
$0.06670
75,000+
$0.06440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose DTA123YETL for its exceptional linearity in amplification circuits. Rohm Semiconductor's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
Related Products
Diodes Incorporated
ADTA143XUAQ-13
Diodes Incorporated
DDTA124XCA-7
Nexperia USA Inc.
PDTA143ZT,235
Nexperia USA Inc.
PDTD123YUF
Toshiba Semiconductor and Storage
RN1427TE85LF
Rohm Semiconductor
DTC023JUBTL
Rohm Semiconductor
DTC144TMT2L
onsemi
MUN2111T3
Diodes Incorporated
DDTA143EUA-7-F
Rohm Semiconductor