DTB123YUT106
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS PNP 200MW UMT3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.08620
6,000+
$0.07758
15,000+
$0.06896
30,000+
$0.06465
75,000+
$0.06034
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DTB123YUT106 from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Rohm Semiconductor's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
Related Products
Diotec Semiconductor
MMBTRC116SS
onsemi
DTC144TT1G
Panasonic Electronic Components
UNR521LG0L
Rohm Semiconductor
DTA113ZU3HZGT106
onsemi
MUN5115T1G
Rohm Semiconductor
DTA113ZMT2L
onsemi
SMMUN2116LT1G
onsemi
MUN2137T1G
Infineon Technologies
BCR183E6327HTSA1
Toshiba Semiconductor and Storage