DTC144EMFHAT2L
Rohm Semiconductor
Rohm Semiconductor
NPN, SOT-723, R1=R2 POTENTIAL DI
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DTC144EMFHAT2L from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Rohm Semiconductor's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
Related Products
onsemi
MUN2133T1
Rohm Semiconductor
DTA114YUAT106
Nexperia USA Inc.
PDTC115TU,115
Diodes Incorporated
DDTA115TCA-7
Infineon Technologies
BCR196WH6327
Rohm Semiconductor
DTC614TKT146
Nexperia USA Inc.
PDTD113ZUX
Toshiba Semiconductor and Storage
RN2130MFV,L3F
Diodes Incorporated
DDTC113TUA-7-F
onsemi