DVRN6056-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN 40V 0.6A SOT26
$0.14
Available to order
Reference Price (USD)
3,000+
$0.14494
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DVRN6056-7-F Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the DVRN6056-7-F is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN + Zener Diode (Isolated)
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
onsemi
NSVBC847BLT3G
onsemi
2SA1450T-AA
Fairchild Semiconductor
FJP3307DTU
Rohm Semiconductor
2SD2673TL
Microchip Technology
JANS2N5154U3/TR
NTE Electronics, Inc
NTE300
Diodes Incorporated
ZTX949STZ
Nexperia USA Inc.
BCP69-16,115
Rohm Semiconductor
2SA2048KT146Q
Panjit International Inc.