DXTC3C100PD-13
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR POWERDI506
$0.26
Available to order
Reference Price (USD)
1+
$0.25560
500+
$0.253044
1000+
$0.250488
1500+
$0.247932
2000+
$0.245376
2500+
$0.24282
Exquisite packaging
Discount
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The DXTC3C100PD-13 BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The DXTC3C100PD-13 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A, 325mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
- Power - Max: 1.47W
- Frequency - Transition: 130MHz, 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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