DXTN22040DFGQ-7
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR POWERDI3
$0.23
Available to order
Reference Price (USD)
1+
$0.23055
500+
$0.2282445
1000+
$0.225939
1500+
$0.2236335
2000+
$0.221328
2500+
$0.2190225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the DXTN22040DFGQ-7 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The DXTN22040DFGQ-7 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 198MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Related Products
Microchip Technology
JANS2N3507AL
Microchip Technology
2N3486A
Sanyo
2SA1624E-AA-SY
Microchip Technology
2C3740
Diodes Incorporated
BC846BWQ-7-F
Taiwan Semiconductor Corporation
TSB772CK B0G
Microchip Technology
2N5742
onsemi
2SA1682-4-TB-E
Microchip Technology
JANSH2N2222A
Microchip Technology