DXTP3C100PD-13
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR POWERDI50
$0.26
Available to order
Reference Price (USD)
1+
$0.25560
500+
$0.253044
1000+
$0.250488
1500+
$0.247932
2000+
$0.245376
2500+
$0.24282
Exquisite packaging
Discount
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Meet the DXTP3C100PD-13 Diodes Incorporated s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the DXTP3C100PD-13 demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
- Power - Max: 1.76W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)