DXTP560BP5-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 500V 0.15A POWERDI5
$0.80
Available to order
Reference Price (USD)
5,000+
$0.32350
10,000+
$0.32000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the DXTP560BP5-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the DXTP560BP5-13 delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
- Power - Max: 2.8 W
- Frequency - Transition: 60MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
Related Products
onsemi
KSP13BU
NTE Electronics, Inc
2N3704
Harris Corporation
2N3773V
Infineon Technologies
BCX53H6327XTSA1
Central Semiconductor Corp
2N5210 PBFREE
Diodes Incorporated
ZTX689BSTZ
onsemi
2SA2125-TD-H
Fairchild Semiconductor
2N5210TA
Nexperia USA Inc.
2PC4081Q,135
Diodes Incorporated