E3M0120090D
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 900V 23A TO247-3
$11.40
Available to order
Reference Price (USD)
1+
$7.60000
Exquisite packaging
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Enhance your electronic projects with the E3M0120090D single MOSFET from Wolfspeed, Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Wolfspeed, Inc.'s E3M0120090D for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
- Vgs (Max): +18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
- FET Feature: -
- Power Dissipation (Max): 97W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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