ECH8601M-TL-H-P
onsemi
onsemi
MOSFET 2N-CH
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The ECH8601M-TL-H-P by onsemi is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the ECH8601M-TL-H-P offers superior functionality and longevity. Trust onsemi to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
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