EL7155CSZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HI/LOW SIDE 8SOIC
$7.32
Available to order
Reference Price (USD)
1+
$6.15000
10+
$5.52200
97+
$5.22000
194+
$4.52402
291+
$4.29199
582+
$3.85120
1,067+
$3.24800
2,522+
$3.08560
Exquisite packaging
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Renesas Electronics America Inc presents the EL7155CSZ as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT
- Voltage - Supply: 4.5V ~ 16.5V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3.5A, 3.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14.5ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Renesas Electronics America Inc