EL7457CSZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HI/LOW SIDE 16SOIC
$6.91
Available to order
Reference Price (USD)
1+
$6.91000
500+
$6.8409
1000+
$6.7718
1500+
$6.7027
2000+
$6.6336
2500+
$6.5645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc presents the EL7457CSZ as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 13.5ns, 13ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
Related Products
Microchip Technology
TC4427AEOA713
Renesas Electronics America Inc
EL7242CSZ-T13
Microchip Technology
MIC4428YM
Renesas Electronics America Inc
EL7222CSZ
Texas Instruments
UCC27516DRSR
Infineon Technologies
2ED020I12FAXUMA2
Diodes Incorporated
ZXGD3003E6QTA
onsemi
NCP4413P
Texas Instruments
TPS2811QPWRQ1
Texas Instruments