EMB11FHAT2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2PNP 100MA EMT6
$0.38
Available to order
Reference Price (USD)
8,000+
$0.05600
Exquisite packaging
Discount
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Upgrade your electronic designs with the EMB11FHAT2R by Rohm Semiconductor, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the EMB11FHAT2R excels in automotive systems, power management modules, and communication devices. Rohm Semiconductor's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose EMB11FHAT2R for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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