EPC2030
EPC
EPC
GANFET NCH 40V 31A DIE
$7.20
Available to order
Reference Price (USD)
500+
$4.10020
1,000+
$3.45800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the EPC2030 by EPC, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The EPC2030 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose EPC.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Microchip Technology
APT5010B2FLLG
Alpha & Omega Semiconductor Inc.
AOB2502L
Vishay Siliconix
IRFI840GLCPBF
onsemi
FCP16N60
Fairchild Semiconductor
ISL9N312AD3
onsemi
NTD4856NT4G
onsemi
ECH8315-TL-H
Vishay Siliconix
SIHH21N60EF-T1-GE3
STMicroelectronics
STWA75N60DM6
Texas Instruments