EPC2100
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$6.94
Available to order
Reference Price (USD)
500+
$4.71200
1,000+
$4.25600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2100 by EPC is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the EPC2100 offers superior functionality and longevity. Trust EPC to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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