EPC2101ENGRT
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$0.00
Available to order
Reference Price (USD)
500+
$4.77400
1,000+
$4.31200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the EPC2101ENGRT from EPC, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the EPC2101ENGRT provides the reliability and efficiency you need. EPC's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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